View APT30M90AVR_385821.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

APT30M90AVR
300V 33A 0.090
POWER MOS V (R)
Power MOS V(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V(R) also achieves faster switching speeds through optimized gate layout.
TO-3
* Faster Switching * Lower Leakage
* 100% Avalanche Tested * Popular TO-3 Package
G
D
S
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25C Pulsed Drain Current
1
All Ratings: TC = 25C unless otherwise specified.
APT30M90AVR UNIT Volts Amps
300 33 132 30 40 235 1.88 -55 to 150 300 33 30
4
Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current
1
Volts Watts W/C C Amps mJ
(Repetitive and Non-Repetitive)
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
1300
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250A) On State Drain Current
2
MIN
TYP
MAX
UNIT Volts Amps
300 33 0.090 25 250 100 2 4
(VDS > I D(on) x R DS(on) Max, VGS = 10V)
2
Drain-Source On-State Resistance
(VGS = 10V, 0.5 ID[Cont.])
Ohms A nA Volts
050-5822 Rev A
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 1.0mA)
APT Website - http://www.advancedpower.com
Bend, Oregon 97702-1035 F-33700 Merignac - France Phone: (541) 382-8028 Phone: (33) 5 57 92 15 15
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
USA
405 S.W. Columbia Street
FAX: (541) 388-0364 FAX: (33) 5 56 47 97 61
EUROPE
Avenue J.F. Kennedy Bat B4 Parc Cadera Nord
DYNAMIC CHARACTERISTICS
Symbol Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
3
APT30M90AVR
Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 0.5 VDSS ID = ID[Cont.] @ 25C VGS = 15V VDD = 0.5 VDSS ID = ID[Cont.] @ 25C RG = 1.6 MIN TYP MAX UNIT
4100 700 200 130 25 55 12 10 43 7
4950 980 300 195 37 77 24 20 65 14
ns nC pF
Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol IS ISM VSD t rr Q rr Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage
1 2
MIN
TYP
MAX
UNIT Amps Volts ns C
33 132 1.3 390 6
(Body Diode) (VGS = 0V, IS = -ID[Cont.])
Reverse Recovery Time (IS = -ID[Cont.], dl S/dt = 100A/s) Reverse Recovery Charge (IS = -ID[Cont.], dl S/dt = 100A/s)
THERMAL CHARACTERISTICS
Symbol RJC RJA Characteristic Junction to Case Junction to Ambient MIN TYP MAX UNIT C/W
0.53 30
3 See MIL-STD-750 Method 3471 4 Starting T = +25C, L = 2.39mH, R = 25, Peak I = 33A j G L
1 Repetitive Rating: Pulse width limited by maximum junction
temperature. 2 Pulse Test: Pulse width < 380 S, Duty Cycle < 2%
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.6 , THERMAL IMPEDANCE (C/W) D=0.5 0.2 0.1 0.05 0.02 0.01 0.005 0.01 SINGLE PULSE Note:
PDM
0.1 0.05
t1 t2
JC
050-5582 Rev A
Duty Factor D = t1/t2 Peak TJ = PDM x ZJC + TC
Z 0.001 10-5
10-3 10-2 10-1 1.0 10 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
10-4
APT30M90AVR
60 ID, DRAIN CURRENT (AMPERES) 50 5.5V 40 30 5V 20 10 4.5V VGS=6V, 7V, 10V & 15V ID, DRAIN CURRENT (AMPERES) 60 50 40 30 5V 20 10 0 4.5V VGS=15V VGS=10V VGS=7V 6V
5.5V
4V 0 30 60 90 120 150 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS 0 RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE 60 ID, DRAIN CURRENT (AMPERES) 50 40 30 TJ = -55C TJ = +25C TJ = +125C
VDS> ID (ON) x RDS (ON)MAX. 250SEC. PULSE TEST @ <0.5 % DUTY CYCLE
4V 0 1 2 3 4 5 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS 2.0
V
GS
NORMALIZED TO = 10V @ 0.5 I [Cont.]
D
1.8 1.6
1.4
VGS=10V VGS=20V
20 10 0 TJ = +125C TJ = +25C TJ = -55C
1.2 1.0 0.8
0 2 4 6 8 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS 35 ID, DRAIN CURRENT (AMPERES) 30 25 20 15 10 5 0
0
25 50 75 100 125 150 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT
BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) 25
I = 0.5 I [Cont.]
D D
1.20 1.15 1.10 1.05 1.00
0.95 0.90
50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) 2.5 VGS(TH), THRESHOLD VOLTAGE (NORMALIZED)
V
GS
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2
-50
= 10V
2.0
1.1 1.0 0.9 0.8 0.7 050-5822 Rev A
1.5
1.0
0.5
0.0 -50
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
-25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
0.6
-50
APT30M90AVR
150 100 ID, DRAIN CURRENT (AMPERES) 50 10S
OPERATION HERE LIMITED BY RDS (ON)
10,000 5,000 C, CAPACITANCE (pF) Ciss
100S
10 5
1mS
Coss 1,000 500 Crss
10mS 100mS TC =+25C TJ =+150C SINGLE PULSE DC
1 .5
.1
1 5 10 50 100 300 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA
I = I [Cont.]
D D
.01 .1 1 10 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE IDR, REVERSE DRAIN CURRENT (AMPERES) 200 100 50 TJ =+150C TJ =+25C
100
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
20
16
VDS=60V VDS=150V
12 VDS=240V 8
10 5
1 .5
4
50 100 150 200 250 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
0
0
0 0.4 0.8 1.2 1.6 2.0 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
.1
TO-3 (TO-204AE) Package Outline
Seating Plane
3.84 (.151) 4.09 (.161) (2-Places)
Gate
Source
16.64 (.655) 17.15 (.675) 38.61 (1.52) 39.12 (1.54)
22.23 (.875) Max.
1.47 (.058) 1.60 (.063) (2-Places)
Drain (Case)
29.90 (1.177) 30.40 (1.197)
1.52 (.060) 3.43 (.135) 6.35 (.250) 9.15 (.360) 7.92 (.312) 12.70 (.500)
5.21 (.205) 5.72 (.225) 10.67 (.420) 11.18 (.440) 25.15 (0.990) 26.67 (1.050)
050-5822 Rev A
Dimensions in Millimeters and (Inches)
APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,256,583
5,045,903 4,748,103
5,089,434 5,283,202
5,182,234 5,231,474
5,019,522 5,434,095
5,262,336 5,528,058

▲Up To Search▲

Price & Availability of APT30M90AVR

	To Download APT30M90AVR Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .